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FDC5614P P-Kanal Mosfet SMD ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


FDC5614P P-Kanal Mosfet SMD ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Mfr Package Description LEAD FREE, SUPERSOT-6
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 3.0 A
Drain Current-Max (ID) 3.0 A
Drain-source On Resistance-Max 0.105 ohm
DS Breakdown Voltage-Min 60.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1.0
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
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FDC5614P P-Kanal Mosfet SMD

3000mA, 60V
Stok Kodu : CFGJPY69
0,84 TL +KDV
0,99 TL KDV Dahil
20 TL (KDV hariç) ve üzeri alışverişler onaylanmaktadır.
Paylaş:
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  • FDC5614P P-Kanal Mosfet SMD ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    FDC5614P P-Kanal Mosfet SMD ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Mfr Package Description LEAD FREE, SUPERSOT-6
    REACH Compliant Yes
    EU RoHS Compliant Yes
    Status Active
    Configuration SINGLE WITH BUILT-IN DIODE
    Drain Current-Max (Abs) (ID) 3.0 A
    Drain Current-Max (ID) 3.0 A
    Drain-source On Resistance-Max 0.105 ohm
    DS Breakdown Voltage-Min 60.0 V
    FET Technology METAL-OXIDE SEMICONDUCTOR
    JESD-30 Code R-PDSO-G6
    JESD-609 Code e3
    Moisture Sensitivity Level 1
    Number of Elements 1.0
    Number of Terminals 6
    Operating Mode ENHANCEMENT MODE
    Operating Temperature-Max 150.0 Cel
    Package Body Material PLASTIC/EPOXY
    Package Shape RECTANGULAR
    Package Style SMALL OUTLINE
    Peak Reflow Temperature (Cel) 260
    Polarity/Channel Type P-CHANNEL
    Power Dissipation-Max (Abs) 1.6 W
    Qualification Status Not Qualified
    Sub Category Other Transistors
    Surface Mount YES
    Terminal Finish MATTE TIN
    Terminal Form GULL WING
    Terminal Position DUAL
    Time@Peak Reflow Temperature-Max (s) 30
    Transistor Application SWITCHING
    Transistor Element Material SILICON
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