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IRF3710S D2PAK N-Kanal Mosfet SMD ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


IRF3710S D2PAK N-Kanal Mosfet SMD ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 57 A
Drain-source On Resistance-Max 0.0230 ohm
DS Breakdown Voltage-Min 100 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
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IRF3710S D2PAK N-Kanal Mosfet SMD

100V, 57A
Stok Kodu : CFGMSX69
2,99 TL +KDV
3,53 TL KDV Dahil
20 TL (KDV hariç) ve üzeri alışverişler onaylanmaktadır.
0 - 9
%0
10 - 100
%10
101 - 250
%15
251 - 1000
%20
Daha Çok Al - Daha Az Öde !
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  • IRF3710S D2PAK N-Kanal Mosfet SMD ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    IRF3710S D2PAK N-Kanal Mosfet SMD ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Avalanche Energy Rating (Eas) 280 mJ
    Case Connection DRAIN
    Configuration SINGLE WITH BUILT-IN DIODE
    Drain Current-Max (ID) 57 A
    Drain-source On Resistance-Max 0.0230 ohm
    DS Breakdown Voltage-Min 100 V
    FET Technology METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code TO-263AB
    JESD-30 Code R-PSSO-G2
    JESD-609 Code e0
    Moisture Sensitivity Level NOT SPECIFIED
    Number of Elements 1
    Number of Terminals 2
    Operating Mode ENHANCEMENT MODE
    Package Body Material PLASTIC/EPOXY
    Package Shape RECTANGULAR
    Package Style SMALL OUTLINE
    Peak Reflow Temperature (Cel) NOT SPECIFIED
    Polarity/Channel Type N-CHANNEL
    Pulsed Drain Current-Max (IDM) 180 A
    Qualification Status COMMERCIAL
    Surface Mount YES
    Terminal Finish TIN LEAD
    Terminal Form GULL WING
    Terminal Position SINGLE
    Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
    Transistor Application SWITCHING
    Transistor Element Material SILICON
    Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
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