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IXTQ50N20P N-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


IXTQ50N20P N-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Status

Active

Avalanche Energy Rating (Eas)

1000.0 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID)

50.0 A

Drain Current-Max (ID)

50.0 A

Drain-source On Resistance-Max

0.06 ohm

DS Breakdown Voltage-Min

200.0 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PSFM-T3

JESD-609 Code

e3

Number of Elements

1.0

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175.0 Cel

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

360.0 W

Pulsed Drain Current-Max (IDM)

120.0 A

Qualification Status

Not Qualified

Sub Category

FET General Purpose Power

Surface Mount

NO

Terminal Finish

PURE TIN

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Additional Feature

AVALANCHE RATED

" ["DOCUMENT_INFO"]=> string(0) "" ["WARRANTY_INFO"]=> string(0) "" ["DELIVERY_INFO"]=> string(0) "" ["IS_VIDEO_ACTIVE"]=> string(1) "0" ["NOTES"]=> string(0) "" ["TAGS"]=> array(0) { } ["IS_ORDER_NOTE_ACTIVE"]=> bool(false) ["IS_CASH_POINT_ACTIVE"]=> bool(false) ["IS_RELATED_PRODUCTS_ACTIVE"]=> bool(false) ["DISPLAY_GAIN"]=> bool(false) }

IXTQ50N20P N-Kanal Mosfet

200V, 50A, 360W, TO-3P
Stok Kodu : BUZDHJM3
6,73 TL +KDV
7,94 TL KDV Dahil
20 TL (KDV hariç) ve üzeri alışverişler onaylanmaktadır.
Paylaş:
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  • IXTQ50N20P N-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    IXTQ50N20P N-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Status

    Active

    Avalanche Energy Rating (Eas)

    1000.0 mJ

    Case Connection

    DRAIN

    Configuration

    SINGLE WITH BUILT-IN DIODE

    Drain Current-Max (Abs) (ID)

    50.0 A

    Drain Current-Max (ID)

    50.0 A

    Drain-source On Resistance-Max

    0.06 ohm

    DS Breakdown Voltage-Min

    200.0 V

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    JESD-30 Code

    R-PSFM-T3

    JESD-609 Code

    e3

    Number of Elements

    1.0

    Number of Terminals

    3

    Operating Mode

    ENHANCEMENT MODE

    Operating Temperature-Max

    175.0 Cel

    Package Body Material

    PLASTIC/EPOXY

    Package Shape

    RECTANGULAR

    Package Style

    FLANGE MOUNT

    Peak Reflow Temperature (Cel)

    NOT SPECIFIED

    Polarity/Channel Type

    N-CHANNEL

    Power Dissipation-Max (Abs)

    360.0 W

    Pulsed Drain Current-Max (IDM)

    120.0 A

    Qualification Status

    Not Qualified

    Sub Category

    FET General Purpose Power

    Surface Mount

    NO

    Terminal Finish

    PURE TIN

    Terminal Form

    THROUGH-HOLE

    Terminal Position

    SINGLE

    Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

    Transistor Application

    SWITCHING

    Transistor Element Material

    SILICON

    Additional Feature

    AVALANCHE RATED

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