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IXFH26N50 N-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


IXFH26N50 N-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


StatusNRFND
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)26.0 A
Drain Current-Max (ID)26.0 A
Drain-source On Resistance-Max0.2 ohm
DS Breakdown Voltage-Min500.0 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-247
JESD-30 CodeR-PSFM-T3
JESD-609 Codee1
Number of Elements1.0
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150.0 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max300.0 W
Power Dissipation-Max (Abs)300.0 W
Pulsed Drain Current-Max (IDM)104.0 A
Qualification StatusNot Qualified
Sub CategoryFET General Purpose Power
Surface MountNO
Terminal FinishTIN SILVER COPPER
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Additional FeatureAVALANCHE RATED
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IXFH26N50 N-Kanal Mosfet

500V, 26A, TO247
Stok Kodu : JKDG3579
29,86 TL +KDV
35,24 TL KDV Dahil
Paylaş:
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  • IXFH26N50 N-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    IXFH26N50 N-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    StatusNRFND
    Case ConnectionDRAIN
    ConfigurationSINGLE WITH BUILT-IN DIODE
    Drain Current-Max (Abs) (ID)26.0 A
    Drain Current-Max (ID)26.0 A
    Drain-source On Resistance-Max0.2 ohm
    DS Breakdown Voltage-Min500.0 V
    FET TechnologyMETAL-OXIDE SEMICONDUCTOR
    JEDEC-95 CodeTO-247
    JESD-30 CodeR-PSFM-T3
    JESD-609 Codee1
    Number of Elements1.0
    Number of Terminals3
    Operating ModeENHANCEMENT MODE
    Operating Temperature-Max150.0 Cel
    Package Body MaterialPLASTIC/EPOXY
    Package ShapeRECTANGULAR
    Package StyleFLANGE MOUNT
    Peak Reflow Temperature (Cel)NOT SPECIFIED
    Polarity/Channel TypeN-CHANNEL
    Power Dissipation Ambient-Max300.0 W
    Power Dissipation-Max (Abs)300.0 W
    Pulsed Drain Current-Max (IDM)104.0 A
    Qualification StatusNot Qualified
    Sub CategoryFET General Purpose Power
    Surface MountNO
    Terminal FinishTIN SILVER COPPER
    Terminal FormTHROUGH-HOLE
    Terminal PositionSINGLE
    Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
    Transistor ApplicationSWITCHING
    Transistor Element MaterialSILICON
    Additional FeatureAVALANCHE RATED
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