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IRF9640 P-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


IRF9640 P-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Status Transferred
Avalanche Energy Rating (Eas) 790 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.5000 ohm
DS Breakdown Voltage-Min 200 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
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IRF9640 P-Kanal Mosfet

11A, 200V, 0.500 Ohm
IR
Stok Kodu : ABJSTVZ3
2,63 TL +KDV
3,11 TL KDV Dahil
20 TL (KDV hariç) ve üzeri alışverişler onaylanmaktadır.
Paylaş:
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  • IRF9640 P-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    IRF9640 P-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Status Transferred
    Avalanche Energy Rating (Eas) 790 mJ
    Case Connection DRAIN
    Configuration SINGLE WITH BUILT-IN DIODE
    Drain Current-Max (Abs) (ID) 11 A
    Drain Current-Max (ID) 11 A
    Drain-source On Resistance-Max 0.5000 ohm
    DS Breakdown Voltage-Min 200 V
    FET Technology METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code TO-220AB
    JESD-30 Code R-PSFM-T3
    Number of Elements 1
    Number of Terminals 3
    Operating Mode ENHANCEMENT MODE
    Operating Temperature-Max 150 Cel
    Package Body Material PLASTIC/EPOXY
    Package Shape RECTANGULAR
    Package Style FLANGE MOUNT
    Polarity/Channel Type P-CHANNEL
    Power Dissipation-Max (Abs) 125 W
    Pulsed Drain Current-Max (IDM) 44 A
    Qualification Status Not Qualified
    Sub Category Other Transistors
    Surface Mount NO
    Terminal Form THROUGH-HOLE
    Terminal Position SINGLE
    Transistor Application SWITCHING
    Transistor Element Material SILICON
T-Soft E-Ticaret Sistemleriyle Hazırlanmıştır.