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IXSQ20N60B2D1 20A 600V Transistor

IXSQ20N60B2D1, IGBTtype onetransistorIt is in TO3P sheath. IXSQ20N60B2D1 has 20A collector current and 600V Collector-Emitter voltage.

To see IXSQ20N60B2D1 IGBT Transistor functions and functions in more detail, be sure to review the datasheet of this Transistor.

IXSQ20N60B2D1 IGBT Specifications

Name of the productIXSQ20N60B2D1
Product BrandIXYS
Product CategorySemi Conductors
Product Sub-CategoryIGBT
Mounting TypeTHT
Package TypeTO3P
Transistor TypeN Channel
technologyHIGH SPEED
DiodeDiode
Ic 25 ° C35A
Current20A
Temperature (IC)110 ° C
Voltage600V
Operating temperature-55 ° C ~ + 150 ° C
Tj ° C150 ° C
VCE Sat2.5V
Power consumption190W
ConfigurationSINGLE
RohsROHS

Documents

Useful Links

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IXSQ20N60B2D1 20A 600V IGBT Transistor TO3P

Marka/Menşei: IXYS
Stok Kodu : 18075

83.36 TL + KDV
100.03 TL KDV Dahil
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  • IXSQ20N60B2D1 20A 600V Transistor

    IXSQ20N60B2D1, IGBTtype onetransistorIt is in TO3P sheath. IXSQ20N60B2D1 has 20A collector current and 600V Collector-Emitter voltage.

    To see IXSQ20N60B2D1 IGBT Transistor functions and functions in more detail, be sure to review the datasheet of this Transistor.

    IXSQ20N60B2D1 IGBT Specifications

    Name of the productIXSQ20N60B2D1
    Product BrandIXYS
    Product CategorySemi Conductors
    Product Sub-CategoryIGBT
    Mounting TypeTHT
    Package TypeTO3P
    Transistor TypeN Channel
    technologyHIGH SPEED
    DiodeDiode
    Ic 25 ° C35A
    Current20A
    Temperature (IC)110 ° C
    Voltage600V
    Operating temperature-55 ° C ~ + 150 ° C
    Tj ° C150 ° C
    VCE Sat2.5V
    Power consumption190W
    ConfigurationSINGLE
    RohsROHS

    Documents

    Useful Links

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