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IXDA20N120AS-TUB N-Kanal IGBT SMD ürünü ve diğer tüm IGBT (Insulated-gate Bipolar Transistor) çeşitlerinin NPN ve PNP modellerini TO-220 ve TO-247 kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.

IGBT terimi, Insulated-gate Bipolar Transistor isminin kısaltmasıdır. Türkçe karşılığı çok kullanılmamakla birlikte Yalıtılmış-Kontrol Bacaklı Çok Kutuplu Transistör olarak geçer.

İşlevi ise, Mosfet’lerin yetersiz kaldığı noktalarda düşük enerji ile yüksek akımların kontrol edilmesini sağlamaktır. Normal transistörlerin aksine kontrol bacakları (Insulated-gate) yalıtılmıştır. Böylelikle yüksek güçlerin güvenli kontrolüne imkan verir.


IXDA20N120AS-TUB N-Kanal IGBT SMD ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Mfr Package Description D2PAK-3
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection COLLECTOR
Collector Current-Max (IC) 34.0 A
Collector-emitter Voltage-Max 1200.0 V
Configuration SINGLE
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20.0 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1.0
Number of Terminals 2
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200.0 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish PURE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450.0 ns
Turn-on Time-Nom (ton) 120.0 ns
Additional Feature HIGH SPEED
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IXDA20N120AS-TUB N-Kanal IGBT SMD

34A, 1200V, TO-263AB
Stok Kodu : KLPQSWY9
11,62 TL +KDV
13,71 TL KDV Dahil
20 TL (KDV hariç) ve üzeri alışverişler onaylanmaktadır.
0 - 9
%0
10 - 25
%5
25 - 50
%10
51 - 100
%15
Daha Çok Al - Daha Az Öde !
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  • IXDA20N120AS-TUB N-Kanal IGBT SMD ürünü ve diğer tüm IGBT (Insulated-gate Bipolar Transistor) çeşitlerinin NPN ve PNP modellerini TO-220 ve TO-247 kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.

    IGBT terimi, Insulated-gate Bipolar Transistor isminin kısaltmasıdır. Türkçe karşılığı çok kullanılmamakla birlikte Yalıtılmış-Kontrol Bacaklı Çok Kutuplu Transistör olarak geçer.

    İşlevi ise, Mosfet’lerin yetersiz kaldığı noktalarda düşük enerji ile yüksek akımların kontrol edilmesini sağlamaktır. Normal transistörlerin aksine kontrol bacakları (Insulated-gate) yalıtılmıştır. Böylelikle yüksek güçlerin güvenli kontrolüne imkan verir.


    IXDA20N120AS-TUB N-Kanal IGBT SMD ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Mfr Package Description D2PAK-3
    REACH Compliant Yes
    EU RoHS Compliant Yes
    Status Active
    Case Connection COLLECTOR
    Collector Current-Max (IC) 34.0 A
    Collector-emitter Voltage-Max 1200.0 V
    Configuration SINGLE
    Gate-emitter Thr Voltage-Max 6.5 V
    Gate-emitter Voltage-Max 20.0 V
    JEDEC-95 Code TO-263AB
    JESD-30 Code R-PSSO-G2
    JESD-609 Code e3
    Number of Elements 1.0
    Number of Terminals 2
    Operating Temperature-Max 150.0 Cel
    Package Body Material PLASTIC/EPOXY
    Package Shape RECTANGULAR
    Package Style SMALL OUTLINE
    Peak Reflow Temperature (Cel) NOT SPECIFIED
    Polarity/Channel Type N-CHANNEL
    Power Dissipation-Max (Abs) 200.0 W
    Qualification Status Not Qualified
    Sub Category Insulated Gate BIP Transistors
    Surface Mount YES
    Terminal Finish PURE TIN
    Terminal Form GULL WING
    Terminal Position SINGLE
    Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
    Transistor Application MOTOR CONTROL
    Transistor Element Material SILICON
    Turn-off Time-Nom (toff) 450.0 ns
    Turn-on Time-Nom (ton) 120.0 ns
    Additional Feature HIGH SPEED
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