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IRFPC50 N-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


IRFPC50 N-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


REACH Compliant Yes
EU RoHS Compliant Yes
Status Transferred
Avalanche Energy Rating (Eas) 920 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.6000 ohm
DS Breakdown Voltage-Min 600 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED
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IRFPC50 N-Kanal Mosfet

600V, 11A, 0.6ohm, TO-247AC
Stok Kodu : AGSBGP24
6,20 TL +KDV
7,31 TL KDV Dahil
20 TL (KDV hariç) ve üzeri alışverişler onaylanmaktadır.
0 - 9
%0
10 - 100
%5
101 - 250
%10
251 - 1000
%15
Daha Çok Al - Daha Az Öde !
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  • IRFPC50 N-Kanal Mosfet ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    IRFPC50 N-Kanal Mosfet ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    REACH Compliant Yes
    EU RoHS Compliant Yes
    Status Transferred
    Avalanche Energy Rating (Eas) 920 mJ
    Case Connection DRAIN
    Configuration SINGLE WITH BUILT-IN DIODE
    Drain Current-Max (Abs) (ID) 11 A
    Drain Current-Max (ID) 11 A
    Drain-source On Resistance-Max 0.6000 ohm
    DS Breakdown Voltage-Min 600 V
    FET Technology METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code TO-247AC
    JESD-30 Code R-PSFM-T3
    JESD-609 Code e3
    Number of Elements 1
    Number of Terminals 3
    Operating Mode ENHANCEMENT MODE
    Operating Temperature-Max 150 Cel
    Package Body Material PLASTIC/EPOXY
    Package Shape RECTANGULAR
    Package Style FLANGE MOUNT
    Peak Reflow Temperature (Cel) 250
    Polarity/Channel Type N-CHANNEL
    Power Dissipation-Max (Abs) 180 W
    Pulsed Drain Current-Max (IDM) 44 A
    Qualification Status Not Qualified
    Sub Category FET General Purpose Power
    Surface Mount NO
    Terminal Finish MATTE TIN OVER NICKEL
    Terminal Form THROUGH-HOLE
    Terminal Position SINGLE
    Time@Peak Reflow Temperature-Max (s) 30
    Transistor Application SWITCHING
    Transistor Element Material SILICON
    Additional Feature AVALANCHE RATED
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