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BUZ326 N-Kanal Sipmos Mosfet (İndirimli) ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


BUZ326 N-Kanal Sipmos Mosfet (İndirimli) ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Status

Transferred

Avalanche Energy Rating (Eas)

570.0 mJ

Configuration

SINGLE

Drain Current-Max (Abs) (ID)

10.5 A

Drain Current-Max (ID)

10.5 A

Drain-source On Resistance-Max

0.5 ohm

DS Breakdown Voltage-Min

400.0 V

Feedback Cap-Max (Crss)

110.0 pF

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-218

JESD-30 Code

R-PSFM-T3

Number of Elements

1.0

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150.0 Cel

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

N-CHANNEL

Power Dissipation Ambient-Max

125.0 W

Power Dissipation-Max (Abs)

125.0 W

Pulsed Drain Current-Max (IDM)

42.0 A

Qualification Status

Not Qualified

Sub Category

FET General Purpose Power

Surface Mount

NO

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn-off Time-Max (toff)

440.0 ns

Turn-on Time-Max (ton)

130.0 ns

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BUZ326 N-Kanal Sipmos Mosfet (İndirimli)

10.5A, 400V, 0.5ohm, TO-218
Stok Kodu : AEYBCKZ6
4,22 TL 1,79 TL +KDV
2,11 TL KDV Dahil
20 TL (KDV dahil) ve üzeri alışverişler onaylanmaktadır.
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  • BUZ326 N-Kanal Sipmos Mosfet (İndirimli) ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    BUZ326 N-Kanal Sipmos Mosfet (İndirimli) ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Status

    Transferred

    Avalanche Energy Rating (Eas)

    570.0 mJ

    Configuration

    SINGLE

    Drain Current-Max (Abs) (ID)

    10.5 A

    Drain Current-Max (ID)

    10.5 A

    Drain-source On Resistance-Max

    0.5 ohm

    DS Breakdown Voltage-Min

    400.0 V

    Feedback Cap-Max (Crss)

    110.0 pF

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    JEDEC-95 Code

    TO-218

    JESD-30 Code

    R-PSFM-T3

    Number of Elements

    1.0

    Number of Terminals

    3

    Operating Mode

    ENHANCEMENT MODE

    Operating Temperature-Max

    150.0 Cel

    Package Body Material

    PLASTIC/EPOXY

    Package Shape

    RECTANGULAR

    Package Style

    FLANGE MOUNT

    Polarity/Channel Type

    N-CHANNEL

    Power Dissipation Ambient-Max

    125.0 W

    Power Dissipation-Max (Abs)

    125.0 W

    Pulsed Drain Current-Max (IDM)

    42.0 A

    Qualification Status

    Not Qualified

    Sub Category

    FET General Purpose Power

    Surface Mount

    NO

    Terminal Form

    THROUGH-HOLE

    Terminal Position

    SINGLE

    Transistor Application

    SWITCHING

    Transistor Element Material

    SILICON

    Turn-off Time-Max (toff)

    440.0 ns

    Turn-on Time-Max (ton)

    130.0 ns

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