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BUK445 N-Kanal Mosfet (İndirimli) ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


BUK445 N-Kanal Mosfet (İndirimli) ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


Mfr Package DescriptionTO-220, 3 PIN
StatusDiscontinued
Avalanche Energy Rating (Eas)100.0 mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)7.6 A
Drain-source On Resistance-Max0.23 ohm
DS Breakdown Voltage-Min200.0 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
Number of Elements1.0
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150.0 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)30.0 A
Qualification StatusNot Qualified
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
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BUK445 N-Kanal Mosfet (İndirimli)

60V, 7A, 30W
Stok Kodu : DHTVXDIT
3,17 TL 1,34 TL +KDV
1,58 TL KDV Dahil
20 TL (KDV dahil) ve üzeri alışverişler onaylanmaktadır.
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  • BUK445 N-Kanal Mosfet (İndirimli) ürünü ve diğer tüm Fet, HexFet, Power Mosfet, DMOS gibi mosfet çeşitlerinin; N-Kanal (N-Channel), P-Kanal (P-Channel) modellerini Sot-23, Sot-23-6, Sot-93, TO-39, TO-72, TO-94, TO-206, TO-220, TO-226, TO-247, TO-261, TO-276, TO-3P vb. kılıf tiplerinde uygun fiyatlarıyla üye girişi veya üye olmadan satın alabilirsiniz.


    BUK445 N-Kanal Mosfet (İndirimli) ürünü ile ilgili teknik açıklama aşağıdaki gibidir:


    Mfr Package DescriptionTO-220, 3 PIN
    StatusDiscontinued
    Avalanche Energy Rating (Eas)100.0 mJ
    Case ConnectionISOLATED
    ConfigurationSINGLE WITH BUILT-IN DIODE
    Drain Current-Max (ID)7.6 A
    Drain-source On Resistance-Max0.23 ohm
    DS Breakdown Voltage-Min200.0 V
    FET TechnologyMETAL-OXIDE SEMICONDUCTOR
    JEDEC-95 CodeTO-220AB
    JESD-30 CodeR-PSFM-T3
    Number of Elements1.0
    Number of Terminals3
    Operating ModeENHANCEMENT MODE
    Operating Temperature-Max150.0 Cel
    Package Body MaterialPLASTIC/EPOXY
    Package ShapeRECTANGULAR
    Package StyleFLANGE MOUNT
    Polarity/Channel TypeN-CHANNEL
    Pulsed Drain Current-Max (IDM)30.0 A
    Qualification StatusNot Qualified
    Surface MountNO
    Terminal FormTHROUGH-HOLE
    Terminal PositionSINGLE
    Transistor ApplicationSWITCHING
    Transistor Element MaterialSILICON
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